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| PC450T11 PC450T11 s Features 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio ( CTR: MIN. 1 500% at I F = 5mA ) 3. Mini-flat package 4. Applicable to soldering reflow 5. Available tape-packaged products Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption s Outline Dimensions ( Unit : mm ) Internal connection diagram 4 3 Model No. 4.4 0.2 4 3 Anode mark 2.54 0.25 0.4 0.1 1 2 s Applications 1. Programmable controllers 0.1 0.1 2.6 0.2 1 2 0.2 0.05 7.0 + 0.2 - 0.7 3 Emitter 4 Collector 3.6 0.3 C0.4 (Input side ) 5.3 0.3 s Package Specifications Model No. PC450T11 Package Specification Taping diameter 178mm ( 750pcs. ) 0.5 + 0.4 - 0.2 6 1 Anode 2 Cathode s Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Emitter-collector voltage *2 Surge endurance Collector current Collector power dissipation Total power dissipation *3 Isolation voltage Operating temperature Storage temperature *4 Soldering temperature Symbol IF I FM VR P V ECO Esj IC PC P tot V iso T opr T stg T sol Rating 50 1 6 70 6 20 150 150 170 3.75 - 30 to + 100 - 40 to + 125 260 ( Ta = 25C ) Unit mA A V mW V mJ mA mW mW kV rms C C C Input Output *1 Pulse width <=100 s, Duty ratio : 0.001 *2 Esj = 40V ( VCEO ) x 100mA ( IC) x 10ms x 1/2 *3 AC for 1 min., 40 to 60% RH, f = 60Hz *4 For 10 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " PC450T11 s Electro-optical Characteristics Parameter Forward voltage Input Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Output Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Transfer Isolation resistance characFloating capacitance teristics Rise time Response time Fall time Symbol VF IR Ct ICEO BV CEO BV ECO IC V CE(sat) R ISO Cf tr tf Conditions IF = 20mA VR = 4V V = 0, f = 1kHz VCE = 20V, I F = 0 IF = 0 IC = 0.1mA IE = 10 A, I F = 0 VCE = 2V, I F = 5mA IF = 10mA IC = 100mA DC500V, 40 to 60% RH V = 0, f = 1MHz VCE = 2V, I C = 2mA RL = 100 MIN. 40 6 75 5 x 10 10 ( Ta = 25C ) TYP. 1.2 30 10 0.6 50 30 11 MAX. 1.4 10 250 5 60 0.5 1.0 - Unit V A pF A V V mA V pF s s Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Diode Power Dissipation vs. Ambient Temperature 120 40 Diode power dissipation P ( mW ) 50 Forward current I F ( mA ) 100 80 70 60 30 20 40 10 0 - 30 20 0 - 30 0 25 50 75 100 125 0 25 50 75 a 100 ( C ) 125 Ambient temperature T a ( C ) Ambient temperature T PC450T11 Fig. 3 Power Dissipation vs. Ambient Temperature 200 170 Power dissipation P tot ( mW ) 150 Fig. 4 Peak Forward Current vs. Duty Ratio 10000 5000 Peak forward current I FM ( mA ) 2000 1000 500 200 100 50 20 10 Pulse width <=100 s T a = 25C 100 50 0 - 30 0 25 50 75 100 125 Ambient temperature T a ( C ) 5 5 10 - 3 2 5 10 -2 2 5 10 - 1 2 5 1 Duty ratio Fig. 5 Forward Current vs. Forward Voltage 100 25C Fig. 6 Current Tranfer Ratio vs. Forward Current T a = 25C 5000 50 ( mA ) Current tranfer ratio CTR ( % ) 50C 20 75C 10 5 0C - 25C 4000 Forward current I F 3000 V CE = 2V 2000 2 1 0.0 1000 0.5V 0.5 2.0 Forward voltage V F ( V ) 1.0 1.5 2.5 3.0 0 0.1 1.0 5.0 10 Forward current I F ( mA ) 50 100 Fig. 7 Collector Current vs. Collector -emitter Voltage Pc (max) 100 I F = 10mA 5mA 80 T a = 25C Fig. 8 Relative Current Transfer Ratio vs. Ambient Temperature 150 I F = 1mA Relative current transfer ratio ( % ) VCE = 5V Collector current I C ( mA ) 100 60 3mA 40 2.5mA 2mA 20 1.5mA 1mA 0.5mA 0 1.0 2.0 3.0 4.0 Collector-emitter voltage V CE ( V ) 5.0 50 0 0 - 30 0 20 40 60 80 100 Ambient temperature T a ( C ) PC450T11 Fig.9 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.8 0.7 Collector-emitter saturation voltage V CE(sat) ( V ) 0.6 0.5 0.4 0.3 0.2 0.1 0 - 30 10 -9 Fig.10 Collector Dark Current vs. Ambient Temperature 10 -3 I F = 10mA I C = 100mA CEO VCE = 20V 10 ( A) 10 -5 -4 Collector dark current I 10 10 -6 -7 10 -8 0 20 40 60 a 80 ( C ) 100 - 30 Ambient temperature T 0 20 40 60 Ambient temperature T a ( C) 80 100 Fig.11 Response Time vs. Load Resistance 1000 V CE = 2V I C = 2mA T a = 25C Fig.12 Collector-emitter Saturation Voltage vs. Forward Current 5.0 Collector-emitter saturation voltage V CE(sat ) ( V) T a = 25C Response time ( s ) 100 tr tf td 4.0 I C = 5mA 10mA 30mA 3.0 50mA 70mA 2.0 100mA 1.0 0 10 ts 1 0.01 0.1 1 10 0 2.0 4.0 Load resistance ( k ) Forward current I 6.0 8.0 F ( mA ) 10 qPlease refer to the chapter "Precautions for Use. " |
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